Most ZnO-nanostructure devices are fabricated using time-consuming nanomanipulation or one-by-one fabrication techniques, making them unattractive for large-scale production. Despite advantages in manufacturing cost and scalability, solutions-based processing has not produced high performing ZnO thin-film devices. This novel solutions-based process produces ZnO devices with shorter response times, lower device biases, and high light sensitivity.
This novel process uses atomic layer deposition (ALD) to grow a tunnel barrier one atomic layer at a time. Placed between two electrically conducting materials, a tunnel barrier forms a tunnel junction. Electrons pass through the barrier by quantum tunneling. This process forms more uniform, thinner, and lower defect tunnel barriers. By improving the likelihood of quantum tunneling, this process creates higher performing tunnel junction devices.